共 36 条
Knocking Down Highly-Ordered Large-Scale Nanowire Arrays
被引:82
作者:
Pevzner, Alexander
[1
]
Engel, Yoni
[1
]
Elnathan, Roey
[1
]
Ducobni, Tamir
[1
]
Ben-Ishai, Moshit
[1
]
Reddy, Koteeswara
[1
]
Shpaisman, Nava
[1
]
Tsukernik, Alexander
[2
]
Oksman, Mark
[3
]
Patolsky, Fernando
[1
,2
]
机构:
[1] Tel Aviv Univ, Sch Chem, IL-69978 Tel Aviv, Israel
[2] Tel Aviv Univ, Nanoscale Sci Ctr, IL-69978 Tel Aviv, Israel
[3] Tel Aviv Univ, Fac Engn, IL-69978 Tel Aviv, Israel
关键词:
Nanowire;
arrays;
electrical devices;
field effect transistors;
SILICON NANOWIRES;
CARBON NANOTUBES;
BUILDING-BLOCKS;
SINGLE-CRYSTAL;
GROWTH;
FABRICATION;
DEVICES;
BOTTOM;
D O I:
10.1021/nl903560u
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is. nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm(2).
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页码:1202 / 1208
页数:7
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