Knocking Down Highly-Ordered Large-Scale Nanowire Arrays

被引:82
作者
Pevzner, Alexander [1 ]
Engel, Yoni [1 ]
Elnathan, Roey [1 ]
Ducobni, Tamir [1 ]
Ben-Ishai, Moshit [1 ]
Reddy, Koteeswara [1 ]
Shpaisman, Nava [1 ]
Tsukernik, Alexander [2 ]
Oksman, Mark [3 ]
Patolsky, Fernando [1 ,2 ]
机构
[1] Tel Aviv Univ, Sch Chem, IL-69978 Tel Aviv, Israel
[2] Tel Aviv Univ, Nanoscale Sci Ctr, IL-69978 Tel Aviv, Israel
[3] Tel Aviv Univ, Fac Engn, IL-69978 Tel Aviv, Israel
关键词
Nanowire; arrays; electrical devices; field effect transistors; SILICON NANOWIRES; CARBON NANOTUBES; BUILDING-BLOCKS; SINGLE-CRYSTAL; GROWTH; FABRICATION; DEVICES; BOTTOM;
D O I
10.1021/nl903560u
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is. nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm(2).
引用
收藏
页码:1202 / 1208
页数:7
相关论文
共 36 条
[1]   High-performance lithium battery anodes using silicon nanowires [J].
Chan, Candace K. ;
Peng, Hailin ;
Liu, Gao ;
McIlwrath, Kevin ;
Zhang, Xiao Feng ;
Huggins, Robert A. ;
Cui, Yi .
NATURE NANOTECHNOLOGY, 2008, 3 (01) :31-35
[2]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853
[3]   Fabrication of silica nanotube arrays from vertical silicon nanowire templates [J].
Fan, R ;
Wu, YY ;
Li, DY ;
Yue, M ;
Majumdar, A ;
Yang, PD .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (18) :5254-5255
[4]   Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing [J].
Fan, Zhiyong ;
Ho, Johnny C. ;
Jacobson, Zachery A. ;
Yerushalmi, Roie ;
Alley, Robert L. ;
Razavi, Haleh ;
Javey, Ali .
NANO LETTERS, 2008, 8 (01) :20-25
[5]   Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon [J].
Gao, Li ;
Woo, Robyn L. ;
Liang, Baolai ;
Pozuelo, Marta ;
Prikhodko, Sergey ;
Jackson, Mike ;
Goel, Niti ;
Hudait, Mantu K. ;
Huffaker, Diana L. ;
Goorsky, Mark S. ;
Kodambaka, Suneel ;
Hicks, Robert F. .
NANO LETTERS, 2009, 9 (06) :2223-2228
[6]   Controlled growth of Si nanowire arrays for device integration [J].
Hochbaum, AI ;
Fan, R ;
He, RR ;
Yang, PD .
NANO LETTERS, 2005, 5 (03) :457-460
[7]   Logic gates and computation from assembled nanowire building blocks [J].
Huang, Y ;
Duan, XF ;
Cui, Y ;
Lauhon, LJ ;
Kim, KH ;
Lieber, CM .
SCIENCE, 2001, 294 (5545) :1313-1317
[8]   Nanowires for integrated multicolor nanophotonics [J].
Huang, Y ;
Duan, XF ;
Lieber, CM .
SMALL, 2005, 1 (01) :142-147
[9]   Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces [J].
Islam, MS ;
Sharma, S ;
Kamins, TI ;
Williams, RS .
NANOTECHNOLOGY, 2004, 15 (05) :L5-L8
[10]   Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics [J].
Javey, Ali ;
Nam, SungWoo ;
Friedman, Robin S. ;
Yan, Hao ;
Lieber, Charles M. .
NANO LETTERS, 2007, 7 (03) :773-777