Growth of cobalt on GaAs(001) studied by photoemission and photoelectron diffraction

被引：9

作者：

Ababou, S ^{[1
]}

Lepine, B ^{[1
]}

Pingel, R ^{[1
]}

Godefroy, A ^{[1
]}

Quemerais, A ^{[1
]}

Guivarch, A ^{[1
]}

Jezequel, G ^{[1
]}

机构：

[1] CNRS, ERS 0136, Lab Spect Solide, F-35042 Rennes, France

来源：

SURFACE REVIEW AND LETTERS | 1998年 / 5卷 / 01期

关键词：

D O I：

10.1142/S0218625X98000529

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Co ultrathin films of increasing thickness (1-40 ML) are deposited on MBE grown GaAs(001) (As 2 x 4) substrates at RT and 200 degrees C and studied by integrated photoemission and photoelectron diffraction. Co appears to grow on a reacted layer whose thickness strongly depends on deposition temperature (up to 4 nm at 200 degrees C). This interfacial reacted layer appears to exhibit a layered structure composed of two compounds.

引用

页码：285 / 288

页数：4

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