A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells

被引：6

作者：

Peng, CS ^{[1
]}

Li, W ^{[1
]}

Jouhti, T ^{[1
]}

Pavelescu, EM ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

defects; diffusion; X-ray diffraction; nitrides; molecular beam epitaxy; quantum wells;

D O I：

10.1016/S0022-0248(02)02505-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied effects of the distribution of interstitial (Ni) and substitutional nitrogen (N-s) and In/Ga interdiffusion on optical properties of the dilute nitride quantum wells (QWs) and the ways of suppressing diffusion. Without annealing, the concentration of N-i remained almost constant while N-s was linearly dependent on the total number of N. After annealing, the Ni can be removed dramatically, and interdiffusion between In and Ga was found. Inserting a thin InxdGa1-xdNydAs1-yd layer on either side of an InwqGa1-xqNyqAs1-yq QW (xq > xd) appears to suppress this interdiffusion. As a consequence, a blue shift of the photoluminescence signal after annealing remained small and the optical activity was largely improved. It was also found that a small amount of N incorporated in InGaAs QWs embedded in GaAs increased the In/Ga interdiffusion and that increased mechanical stresses enhanced the interdiffusion. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：378 / 382

页数：5

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