Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

被引：89

作者：

Pan, Z ^{[1
]}

Li, LH ^{[1
]}

Zhang, W ^{[1
]}

Lin, YW ^{[1
]}

Wu, RH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.126928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

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页码：214 / 216

页数：3

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