RBS-ERDA, XPS and XRD characterizations of PECVD tungsten nitride films

被引：22

作者：

Meunier, C

Monteil, C

Savall, C

Palmino, F

Weber, J

Berjoan, R

Durand, J

机构：

[1] Lab Meteorol Interfaces Tech, F-25211 Montbeliard, France

[2] Watkins Johnson Europe, Semicond Equipment, Espace Cezanne, F-13856 Aix En Provence, France

[3] Inst Sci & Genie Mat & Proc, F-661200 Font Romeu, France

[4] Lab Mat & Proc Membranaires, CNRS, UMR 9998, F-34053 Montpellier, France

[5] Lab Phys & Metrol Oscillateurs, CNRS, UPR 3203, Equipe Elect Solides, F-25211 Montbeliard, France

[6] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

来源：

APPLIED SURFACE SCIENCE | 1998年 / 125卷 / 3-4期

关键词：

D O I：

10.1016/S0169-4332(97)00383-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Tungsten nitride thin films are synthesized by plasma enhanced chemical vapor deposition using a hot wall type reactor. Amorphous and nanocrystalline W and W-N:H thin films are obtained in the temperature range 250-620 degrees C with a plasma generated by a low frequency generator. Feed gases used are WF6, NH3, Ar and H-2. Amorphous tungsten nitrides can be obtained at 250 degrees C without hydrogen in the plasma. The surface is examined by atomic force microscopy (AFM) in order to evaluate growth conditions on silicon (100) substrate. Elastic recoil detection analysis indicates that the hydrogen content is about 16% at the surface and 10% at the silicon-film interface. XRD analysis show a tungsten or tungsten nitride crystallographic form for the films analyzed. (C) 1998 Elsevier Science B.V.

引用

页码：313 / 320

页数：8

共 21 条

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