Nonlinear limits for single-crystal silicon microresonators

被引:320
作者
Kaajakari, V [1 ]
Mattila, T [1 ]
Oja, A [1 ]
Seppä, H [1 ]
机构
[1] VTT Informat Technol, FIN-02044 Espoo, Finland
关键词
bifurcation; bulk acoustic wave (BAW) devices; hysteresis; microresonators; nonlinear oscillators; nonlinearities; oscillator noise; oscillators; phase noise; resonators;
D O I
10.1109/JMEMS.2004.835771
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nonlinear effects in single-crystal silicon microresonators; are analyzed with the focus on mechanical nonlinearities. The bulk acoustic wave (BAW) resonators are shown to have orders-of-magnitude higher energy storage capability than flexural beam resonators. The bifurcation point for the silicon BAW resonators is measured and the maximum vibration amplitude is shown to approach the intrinsic material limit. The importance of nonlinearities in setting the limit for vibration energy storage is demonstrated in oscillator applications. The phase noise calculated for silicon microresonator-based oscillators is compared to the conventional macroscopic quartz-based oscillators, and it is shown that the higher energy density attainable with the silicon resonators can partially compensate for the small microresonator size. Scaling law for microresonator phase noise is developed.
引用
收藏
页码:715 / 724
页数:10
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