A CMOS image sensor with a double-junction active pixel

被引：13

作者：

Findlater, KM ^{[1
]}

Renshaw, D

Hurwitz, JED

Henderson, RK

Purcell, MD

Smith, SG

Bailey, TER

机构：

[1] STMicroelect Imaging Div, Edinburgh EH12 7BF, Midlothian, Scotland

[2] Univ Edinburgh, Dept Elect & Elect Engn, Edinburgh EH9 3JL, Midlothian, Scotland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

CMOS; color; image sensors; photodiodes;

D O I：

10.1109/TED.2002.807259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS image sensor that employs a vertically integrated double-junction photodiode structure is presented. This allows color imaging with only two filters. The sensor uses a 184 * 154 (near-QCIEF) 6-transistor pixel array at a 9.6-mum pitch implemented in 0.35-mum technology. Results of the device characterization are presented. The imaging performance of an integrated two-filter color sensor is also projected, using measurements and software processing of subsampled images from, the monochrome sensor with two color filters.

引用

页码：32 / 42

页数：11

共 36 条

[1]

[Anonymous], IEEE INT SOL STAT CI

[2]

*AV CORP, 2000, MEDICI US MAN

[3]

Bayer B.E., 1975, US Patent, Patent No. [3,971,065, 3971065]

[4] Colour detection using buried triple pn junction structure implemented in BiCMOS process [J].

Ben Chouikha, M ;

Lu, GN ;

Sedjil, M ;

Sou, G .

ELECTRONICS LETTERS, 1998, 34 (01) :120-122

[5]

BEYNON JDE, 1980, CHARGE COUPLED DEVIC

[6]

Burkey B. C., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P28

[7]

Burkey B. C., 1986, U.S. Patent, Patent No. [4 613 895, 4613895]

[8]

CAO MC, 2000, Patent No. 6111300

[9]

CHOUICKHA MB, 1999, P SOC PHOTO-OPT INS, V3410, P46

[10] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

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