Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs

被引:45
作者
Brown, ER [1 ]
Bacher, A
Driscoll, D
Hanson, M
Kadow, C
Gossard, AC
机构
[1] Univ Calif Los Angeles, Los Angeles, CA 90095 USA
[2] Univ Calif Santa Barbara, Santa Barbara, CA 91109 USA
关键词
D O I
10.1103/PhysRevLett.90.077403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Room-temperature attenuation measurements are made between lambda=0.8 and 10.0 mum on three GaAs epitaxial samples containing layers of ErAs nanoparticles. An asymmetric attenuation peak is observed around 2.5 mum that increases in strength with ErAs density, and is modeled well by a Maxwell-Garnett formulation and semiclassical transport theory. The nanoparticles are assigned a distribution function of oblate spheroids having a minimum volume corresponding to a 1.0-nm sphere. This is consistent with the self-organizing tendency of ErAs in GaAs, and explains the sharp attenuation peak as a spherical-particle surface-plasmon (i.e., Frohlich) resonance.
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页数:4
相关论文
共 11 条
[1]  
Ashcroft N. W., 1973, SOLID STATE PHYS
[2]  
Bohren C. F., 1998, ABSORPTION SCATTERIN
[3]  
FROHLICH H, 1954, THEORY DIELECTRICS
[4]   Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics [J].
Kadow, C ;
Fleischer, SB ;
Ibbetson, JP ;
Bowers, JE ;
Gossard, AC ;
Dong, JW ;
Palmstrom, CJ .
APPLIED PHYSICS LETTERS, 1999, 75 (22) :3548-3550
[5]   Growth and microstructure of self-assembled ErAs islands in GaAs [J].
Kadow, C ;
Johnson, JA ;
Kolstad, K ;
Ibbetson, JP ;
Gossard, AC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04) :2197-2203
[6]  
KADOW C, IN PRESS J VAC SCI B
[7]  
KITTEL C, 1976, INTRO SOLID STATE PH, P308
[8]   Spin-orbit effects on the band structure and Fermi surface of ErAs and ErxSc1-xAs [J].
Lambrecht, WRL ;
Segall, B ;
Petukhov, AG ;
Bogaerts, R ;
Herlach, F .
PHYSICAL REVIEW B, 1997, 55 (15) :9239-9242
[9]   STRUCTURAL, ELECTRICAL AND OPTICAL CHARACTERIZATION OF SINGLE-CRYSTAL ERAS LAYERS GROWN ON GAAS BY MBE [J].
RALSTON, JD ;
ENNEN, H ;
WENNEKERS, P ;
HIESINGER, P ;
HERRES, N ;
SCHNEIDER, J ;
MULLER, HD ;
ROTHEMUND, W ;
FUCHS, F ;
SCHMALZLIN, J ;
THONKE, K .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (06) :555-560
[10]   SELF-ORGANIZING GROWTH OF ERBIUM ARSENIDE QUANTUM DOTS AND WIRES IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY [J].
SINGER, KE ;
RUTTER, P ;
PEAKER, AR ;
WRIGHT, AC .
APPLIED PHYSICS LETTERS, 1994, 64 (06) :707-709