Similar roles of electrons and holes in luminescence degradation of organic light-emitting devices

被引:37
作者
Luo, Yichun
Aziz, Hany [1 ]
Xu, Gu
Popovic, Zoran D.
机构
[1] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
[2] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada
关键词
D O I
10.1021/cm062621i
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Intrinsic degradation in organic light-emitting devices (OLEDs), the dominating cause of the short device lifetime, continues to be a critical issue for wider commercial application. For many years, intrinsic degradation in tris(8-hydroxyquinoline) aluminum (AlQ(3))-based OLEDs has been known to be caused by excessive hole injection into the AlQ(3) emissive layer, due largely to earlier observations that electrons and holes act differently in the devices. However, a further investigation here leads to the discovery that excessive electrons can also induce significant degradation of the AlQ(3) layer, similar to what has been established for holes. The new understanding of the degradation mechanism of OLEDs is instrumental in directing the efforts of developing stable devices.
引用
收藏
页码:2079 / 2083
页数:5
相关论文
共 23 条
[1]   Degradation mechanism of small molecule-based organic light-emitting devices [J].
Aziz, H ;
Popovic, ZD ;
Hu, NX ;
Hor, AM ;
Xu, G .
SCIENCE, 1999, 283 (5409) :1900-1902
[2]   Degradation phenomena in small-molecule organic light-emitting devices [J].
Aziz, H ;
Popovic, ZD .
CHEMISTRY OF MATERIALS, 2004, 16 (23) :4522-4532
[3]   Organic light emitting devices with enhanced operational stability at elevated temperatures [J].
Aziz, H ;
Popovic, ZD ;
Hu, NX .
APPLIED PHYSICS LETTERS, 2002, 81 (02) :370-372
[4]   Improving the stability of organic light-emitting devices by using a thin Mg anode buffer layer [J].
Aziz, Hany ;
Luo, Yichun ;
Xu, Gu ;
Popovic, Zoran D. .
APPLIED PHYSICS LETTERS, 2006, 89 (10)
[5]   Interface electronic structure of organic semiconductors with controlled doping levels [J].
Blochwitz, J. ;
Fritz, T. ;
Pfeiffer, M. ;
Leo, K. ;
Alloway, D. M. ;
Lee, P. A. ;
Armstrong, N. R. .
ORGANIC ELECTRONICS, 2001, 2 (02) :97-104
[6]   Device physics of organic light-emitting diodes based on molecular materials [J].
Bruetting, Wolfgang ;
Berleb, Stefan ;
Mueckl, Anton G. .
ORGANIC ELECTRONICS, 2001, 2 (01) :1-36
[7]   Efficient and durable organic alloys for electroluminescent displays [J].
Choong, VE ;
Shen, J ;
Curless, J ;
Shi, S ;
Yang, J ;
So, F .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (07) :760-763
[8]   Graded mixed-layer organic light-emitting devices [J].
Chwang, AB ;
Kwong, RC ;
Brown, JJ .
APPLIED PHYSICS LETTERS, 2002, 80 (05) :725-727
[9]   Direct observation of deep electron traps in aged organic light emitting diodes [J].
Kondakov, DY .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
[10]   Nonradiative recombination centers and electrical aging of organic light-emitting diodes: Direct connection between accumulation of trapped charge and luminance loss [J].
Kondakov, DY ;
Sandifer, JR ;
Tang, CW ;
Young, RH .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :1108-1119