Novel Semiconducting Quinone for Air-Stable n-Type Organic Field-Effect Transistors

被引：48

作者：

Mamada, Masashi ^{[1
]}

Kumaki, Daisuke ^{[2
]}

Nishida, Jun-ichi ^{[1
]}

Tokito, Shizuo ^{[2
]}

Yamashita, Yoshiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect Chem, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2010年 / 2卷 / 05期

基金：

日本学术振兴会;

关键词：

field-effect transistors; organic semiconductors; organic electronics; n-type air-stable materials; quinones; THIN-FILM TRANSISTORS; HIGH-ELECTRON-MOBILITY; DIIMIDE SEMICONDUCTORS; LOW-TEMPERATURE; CHANNEL; TRANSPORT; DESIGN;

D O I：

10.1021/am1001794

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Quinones are promising moieties for n-type organic semiconductors due to their high electron affinity. Benzo[1,2-b:4,5-b']-dithiophene-4,8-dione derivative with a quinone moiety have been synthesized, characterized, and used as active layer of organic field-effect transistors (OFETs). This derivative has deep LUMO level, leading to efficient charge-carrier injection and air stability. In addition, it forms a columnar structure with efficient intermolecular pi-pi and horizontal direction interactions, leading to high electron mobilities. In fact, OFET devices fabricated here showed good n-type characteristics, where the electron mobility was 0.15 cm(2) V-1 s(-1) under vacuum conditions and above 0.1 cm(2) V-1 s(-1) in air.

引用

页码：1303 / 1307

页数：5

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