Microwave properties of compositionally graded (Ba, Sr)TiO3 thin films according to the direction of the composition gradient for tunable microwave applications

被引:76
作者
Lee, SJ [1 ]
Moon, SE [1 ]
Ryu, HC [1 ]
Kwak, MH [1 ]
Kim, YT [1 ]
Han, SK [1 ]
机构
[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea
关键词
D O I
10.1063/1.1565705
中图分类号
O59 [应用物理学];
学科分类号
摘要
Compositionally graded (Ba-x, Sr1-x)TiO3 (BST) thin films were deposited on MgO substrates by pulsed laser ablation. The microwave properties of the graded BST thin films were investigated at microwave frequencies with coplanar waveguide (CPW) meander-line phase shifters as a function of the direction of the composition gradient with respect to the substrate at room temperature. CPW phase shifters using graded BaTiO3(BT)-->SrTiO3(ST) and ST-->BT thin films exhibited a differential phase shift of 73degrees and 22degrees at 10 GHz with a dc bias voltage of 150 V, respectively. The figure of merit of the phase shifters at 10 GHz was 14.6 deg/dB for the graded BT-->ST film, and 10 deg/dB for the graded ST-->BT film. The graded BT-->ST thin films showed a larger phase tuning than the ST-->BT thin films. The microwave properties of the graded BST films depended strongly on the crystalline structure and the direction of the composition gradient with respect to the substrate. (C) 2003 American Institute of Physics.
引用
收藏
页码:2133 / 2135
页数:3
相关论文
共 13 条
[1]   Tunable microwave components based on dielectric nonlinearity by using HTS/ferroelectric thin films [J].
Abbas, F ;
Davis, LE ;
Gallop, JC .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (04) :3511-3517
[2]   Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters [J].
Carlson, CM ;
Rivkin, TV ;
Parilla, PA ;
Perkins, JD ;
Ginley, DS ;
Kozyrev, AB ;
Oshadchy, VN ;
Pavlov, AS .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1920-1922
[3]  
KIM EK, 2001, FERROELECTRICS, V272, P237
[4]   Microwave properties of tetragonally distorted (Ba0.5Sr0.5)TiO3 thin films [J].
Kim, WJ ;
Chang, W ;
Qadri, SB ;
Pond, JM ;
Kirchoefer, SW ;
Chrisey, DB ;
Horwitz, JS .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1185-1187
[5]   Microwave properties of compositionally graded (Ba, Sr)TiO3 thin films for electrically tunabel microwave devices [J].
Lee, SJ ;
Moon, SE ;
Kwak, MH ;
Ryu, HC ;
Kim, YT ;
Han, SK .
INTEGRATED FERROELECTRICS, 2002, 49 :151-158
[6]   Temperature dependence of conventional and effective pyroelectric coefficients for compositionally graded BaxSr1-xTiO3 films [J].
Mohammed, MS ;
Auner, GW ;
Naik, R ;
Mantese, JV ;
Schubring, NW ;
Micheli, AL ;
Catalan, AB .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) :3322-3325
[7]  
MOON SE, 2001, FERROELECTRICS, V272, P333
[8]  
Romanofsky R, 2001, INTEGR FERROELECTR, V39, P1249
[9]   Graded ferroelectrics: a new class of steady-state thermal/electrical/mechanical energy interchange devices [J].
Schubring, NW ;
Mantese, JV ;
Micheli, AL ;
Catalan, AB ;
Mohammed, MS ;
Naik, R ;
Auner, G .
INTEGRATED FERROELECTRICS, 1999, 24 (1-4) :155-168
[10]   Functional graded high-K (Ba1-xSrx)TiO3 thin films for capacitor structures with low temperature coefficient [J].
Slowak, R ;
Hoffmann, S ;
Liedtke, R ;
Waser, R .
INTEGRATED FERROELECTRICS, 1999, 24 (1-4) :169-179