A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of InAs and InP islands on (001) GaP

被引：35

作者：

Junno, B ^{[1
]}

Junno, T ^{[1
]}

Miller, MS ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Univ Lund, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.120883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pie have studied the formation of strained InAs and InP island structures on GaP surfaces grown by chemical beam epitaxy. InP grows pseudomorphically for 3 ML before island crystallization is observed by reflection high-energy electron diffraction, following a typical Stranski-Krastanov growth mode. For the growth of In.4s on GaP, three-dimensional diffraction peaks are observed after 0.9 ML of InAs have been deposited, indicating a Volmer-Weber growth mode. Atomic force microscopy studies of these structures are presented and the optical properties are discussed. (C) 1998 American Institute of Physics.

引用

页码：954 / 956

页数：3

共 11 条

[1]

[Anonymous], SITZUNGSBER AK 2B MN

[2] STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES [J].