Free versus localized exciton in GaAs V-shaped quantum wires

被引：28

作者：

Lomascolo, M

Ciccarese, P

Cingolani, R

Rinaldi, R

Reinhart, FK

机构：

[1] Univ Lecce, Dipartimento Sci Mat, INFM, I-73100 Lecce, Italy

[2] Ecole Polytech Fed Lausanne, PH Ecublense, CH-15 Lausanne, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.366683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a systematic investigation of continuous wave and transient photoluminescence in GaAs V-shaped quantum wires as a function of temperature, aimed to the understanding of the radiative recombination mechanism of the ground level (localized versus free-exciton recombination). Exciton localization is observed at low temperatures. Free-exciton polariton transitions are monitored at intermediate temperatures through the square root temperature dependence of the decay time. Exciton localization energy, density of localization centers and exciton intrinsic lifetime have been determined from the theoretical analysis of the transient photoluminescence, thus providing a simple quantitative method for the assessment of sample quality. (C) 1998 American Institute of Physics.

引用

页码：302 / 305

页数：4

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