Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering

被引：43

作者：

Burm, J

Eastman, LF

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 01期

关键词：

D O I：

10.1109/68.475796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To understand the nature of low-frequency gain in MSM photodiodes, Schottky barrier height was measured for an MSM photodiode fabricated on GaAs-based layers. The Schottky barrier height showed a dependence on the light irradiation and bias. This can be explained by a lowering of the Schottky barrier due to charge accumulation at surface states and image-force lowering at the edges of metal electrodes where electric field is extremely high. Thermionic hole emission is proposed as a source of low-frequency gain of MSM photodiodes.

引用

页码：113 / 115

页数：3

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