Development of high efficiency large area silicon thin film modules using VHF-PECVD

被引:68
作者
Takatsuka, H
Noda, M
Yonekura, Y
Takeuchi, Y
Yamauchi, Y
机构
[1] Mitsubishi Heavy Ind Co Ltd, Nagasaki Res & Dev Ctr, Appl Phys Lab, Nagasaki 8510392, Japan
[2] Mitsubishi Heavy Ind Co Ltd, Nagasaki Shipyard & Machinery Works, Solar Cell Power Syst Dept, Isahaya 8540065, Japan
关键词
amorphous silicon; microcrystalline silicon; solar cell; tandem cell; VHF; PECVD; high deposition rate; large area deposition;
D O I
10.1016/j.solener.2004.06.007
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper reviews recent work on the development of thin film silicon solar modules and cost-effective production technology. Noting the potential of VHF-PECVD for high rate and high quality deposition, we initiated development of a-Si solar modules. In the first stage, we succeeded in up-scaling a-Si high quality uniform deposition at a high rate of over 1.0 nm/s to a substrate area of 1.1 x 1.4 m(2) to achieve high productivity. Next, the large area a-Si solar modules with stable aperture efficiency of 8% were developed, and the commercial production of a-Si solar modules commenced in October 2002. In the second stage, aiming at stable efficiency of 12%, which could make the PV power generating cost below residential electricity prices in combination with cost-effective production technology, we have been developing a-Si/muc-Si tandem solar modules. Recently, tandem modules of 40 x 50 cm(2) in size with a muc-Si i-layer prepared at a deposition rate of 2.1 nm/s yielded initial conversion efficiencies of 11.1%. As for small sized muc-Si single cells, technologies with a high deposition rate of 2.5 nm/s and efficiency of 8.8% have already been developed. In addition, by improving the up-scaling and light-trapping techniques, we will achieve our current goal of 12% stable efficiency for a-Si/muc-Si tandem modules at a deposition rate of over 2.0 nm/s, leading to cost-effective mass production. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:951 / 960
页数:10
相关论文
共 22 条
[1]   INFLUENCE OF PLASMA EXCITATION-FREQUENCY FOR ALPHA-SI-H THIN-FILM DEPOSITION [J].
CURTINS, H ;
WYRSCH, N ;
FAVRE, M ;
SHAH, AV .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1987, 7 (03) :267-273
[2]  
GOYA S, 2003, WCPEC3
[3]   ANALYSIS OF HIGH-RATE A-SI-H DEPOSITION IN A VHF PLASMA [J].
HEINTZE, M ;
ZEDLITZ, R ;
BAUER, GH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (10) :1781-1786
[4]   New diagnostic aspects of high rate a-Si:H deposition in a VHF plasma [J].
Heintze, M ;
Zedlitz, R .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 :1038-1041
[5]   High rate growth of microcrystalline silicon at low temperatures [J].
Kondo, M ;
Fukawa, M ;
Guo, LH ;
Matsuda, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :84-89
[6]   Potential of VHF-plasmas for low-cost production of a-Si:H solar cells [J].
Kroll, U ;
Shah, A ;
Keppner, H ;
Meier, J ;
Torres, P ;
Fischer, D .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 48 (1-4) :343-350
[7]  
KUSKE J, 1995, MATER RES SOC S P, V27, P377
[8]  
KUWANO Y, 1985, SOLAR CELLS THEIR AP, P42
[9]  
MATSUI T, 2003, WCPEC 3
[10]   COMPLETE MICROCRYSTALLINE P-I-N SOLAR-CELL - CRYSTALLINE OR AMORPHOUS CELL BEHAVIOR [J].
MEIER, J ;
FLUCKIGER, R ;
KEPPNER, H ;
SHAH, A .
APPLIED PHYSICS LETTERS, 1994, 65 (07) :860-862