New diagnostic aspects of high rate a-Si:H deposition in a VHF plasma

被引：52

作者：

Heintze, M

Zedlitz, R

机构：

[1] Inst. für Phys. Elektronik, Universität Stuttgart, 70569 Stuttgart

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00035-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An a-Si:H deposition plasma operated in the wide frequency range from 32 to 180 MHz was investigated to identify frequency effects on the plasma bulk (density, power dissipation) and on the sheaths. Results are presented on the electron density, plasma impedance and power coupling efficiency, as well as measurements of the flux of ions to a growth surface and their energetic distribution. The results help to explain the observed increased film growth rate in a very high frequency plasma.

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页码：1038 / 1041

页数：4

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