Dielectric function of epitaxial ZnSe films

被引：12

作者：

Koo, MS ^{[1
]}

Kim, TJ

Lee, MS

Oh, MS

Kim, YD

Yoo, SD

Aspnes, DE

Jonker, BT

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27606 USA

[3] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1328098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine various ZnSe spectra to obtain that which best represents the dielectric response epsilon of ZnSe. The measured evolution of pseudodielectric function [epsilon] data with chemical etching shows that the natural overlayer on ZnSe can be modeled accurately only if we assume that it contains amorphous Se. Hence previous assumptions made in correcting [epsilon] mathematically are not correct, and data obtained on stripped samples yield the best representation of epsilon. (C) 2000 American Institute of Physics. [S0003-6951(00)05147-0].

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页码：3364 / 3366

页数：3

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