1.55-μm InGaAsP-InP laser arrays with integrated-mode expanders fabricated using a single epitaxial growth

被引:50
作者
Vusirikala, V [1 ]
Saini, SS
Bartolo, RE
Agarwala, S
Whaley, RD
Johnson, FG
Stone, DR
Dagenais, M
机构
[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Joint Program Adv Elect Mat, College Pk, MD 20742 USA
[3] Lab Phys Sci, College Pk, MD 20740 USA
关键词
adiabatic transformation; alignment tolerant structures; coupling efficiency; mode expanders; resonant coupling; semiconductor quantum-well lasers;
D O I
10.1109/2944.658787
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on two techniques for the realization of expanded-mode laser arrays with a single epitaxial growth step and conventional fabrication techniques. Laser arrays with integrated adiabatic-mode expanders (AME) based on a tapered active region and an underlying passive coupling waveguide are demonstrated at the 1.55-mu m wavelength, These lasers butt couple to standard cleaved single-mode fibers (SMF's) with a loss of only 3.6 dB, This coupling efficiency compares with a theoretical calculation of 3.2 dB, We also propose a novel realization of a laser with an integrated-mode expander based on resonant coupling between a tapered active waveguide and an underlying coupling waveguide, Three-dimensional (3-D) beam propagation method (BPM results are presented which show that compact, efficient mode expanders with a mode transformation loss of only 0.36 dB can be realized using this method, putt-coupling efficiencies of 2.6 dB are possible to standard cleaved single-mode fibers.
引用
收藏
页码:1332 / 1343
页数:12
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