Moderate-temperature thermoelectric properties of TiCoSb-based half-Heusler compounds Ti1-xTaxCoSb

Ta-doped Ti1-xTaxCoSb (0 <= x <= 0.08) half-Heusler compounds were synthesized by melting and annealing process. Their thermoelectric properties were studied in the temperature range of 300-900 K. The Ti1-xTaxCoSb compounds exhibit negative Seebeck coefficients with considerably large absolute values. With increasing Ta substitution, the electrical conductivity was greatly increased, but the thermal conductivity was reduced. Because of the combined effects of increased electrical conductivity and reduced thermal conductivity, the thermoelectric performance of Ti1-xTaxCoSb alloys was apparently improved by doping Ta. The dimensionless figure of merit of 0.3 was obtained for Ti0.92Ta0.08CoSb compound at 900 K. This value is about ten times larger than that of the undoped TiCoSb compound. (c) 2007 American Institute of Physics.