Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits

被引：88

作者：

Paik, Hanhee ^{[1
]}

Osborn, Kevin D. ^{[1
]}

机构：

[1] Lab Phys Sci, College Pk, MD 20740 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期

关键词：

amorphous state; dielectric losses; dielectric thin films; hydrogen; impurities; silicon compounds; CHEMICAL-VAPOR-DEPOSITION; PLASMA DEPOSITION; HYDROGEN CONTENT; FILMS; ABSORPTION;

D O I：

10.1063/1.3309703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The loss of amorphous hydrogenated silicon nitride (a-SiNx:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system defect model. Each a-SiNx:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent tan delta(0) in a-SiNx:H is strongly correlated with N-H impurities, including NH2. By slightly reducing x we are able to reduce tan delta(0) by approximately a factor of 50, where the best films show tan delta(0)similar or equal to 3x10(-5).

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页数：3

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