Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

被引：33

作者：

Lee, Y. J. ^{[1
]}

Lin, P. C. ^{[1
]}

Lu, T. C. ^{[1
]}

Kuo, H. C. ^{[1
]}

Wang, S. C. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期

关键词：

D O I：

10.1063/1.2722672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 lm/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting. (c) 2007 American Institute of Physics.

引用

页数：3

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