Printed all-polymer electrochemical transistors on patterned ion conducting membranes

被引：29

作者：

Kaihovirta, Nikolai ^{[1
,2
,4
]}

Makela, Tapio ^{[1
,2
]}

He, Xuehan ^{[1
,3
]}

Wikman, Carl-Johan ^{[1
,3
]}

Wilen, Carl-Eric ^{[1
,3
]}

Osterbacka, Ronald ^{[1
,2
]}

机构：

[1] Abo Akad Univ, Ctr Funct Mat, FI-20500 Turku, Finland

[2] Abo Akad Univ, Dept Nat Sci, FI-20500 Turku, Finland

[3] Abo Akad Univ, Dept Chem Engn, FI-20500 Turku, Finland

[4] Turku Univ, Grad Sch Mat Res, FI-20500 Turku, Finland

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 07期

基金：

芬兰科学院;

关键词：

Electrochemical transistor; Organic transistor; All-polymer; PEDOT/PSS; Roll-to-roll; WORM; THIN-FILM TRANSISTORS; OVER-OXIDATION; POLY(3,4-ETHYLENEDIOXYTHIOPHENE); POLYTHIOPHENES; ELECTRONICS; CIRCUITS; MEMORY; LOGIC; CELLS;

D O I：

10.1016/j.orgel.2010.04.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a simple and roll-to-roll suitable method of manufacturing low-voltage, all-polymer electrochemical transistors (ECTs). The ECTs are built on self-supported and patterned ion conducting membranes that are tailor-made by the electron beam irradiation induced grafting technique. The redox-active poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS) is then printed by flexography onto the membrane in one fabrication step. The ECTs are "normally-on" devices that operate below 2 V. We also utilize overoxidation of PEDOT in order to demonstrate write-once read many times (WORM) memory functionality in the ECT. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：1207 / 1211

页数：5

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