Electrical conductivity and relaxation in poly(3-hexylthiophene)

被引:144
作者
Obrzut, Jan [1 ]
Page, Kirt A. [1 ]
机构
[1] Natl Inst Stand & Technol, Div Polymers, Gaithersburg, MD 20899 USA
基金
美国国家科学基金会;
关键词
conducting polymers; dielectric losses; electrical conductivity; neutron diffraction; organic semiconductors; topology; THIN-FILM TRANSISTORS; HOPPING TRANSPORT; NEUTRON-SCATTERING; DISORDERED SOLIDS; GLASS-TRANSITION; CHARGE INJECTION; AC CONDUCTIVITY; POLYMERS; OLIGOTHIOPHENES; SEMICONDUCTORS;
D O I
10.1103/PhysRevB.80.195211
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied the complex conductivity of regioregular poly(3-hexylthiophene) (P3HT) in the temperature range between 193-333 K (-80 degrees C to 60 degrees C) and in the frequency range from the direct current (dc) to 12 GHz. The identified relaxation process was investigated by quasielastic neutron scattering (QENS). The dielectric loss peak extracted from complex conductivity corresponds to local molecular motions having an activation energy of about 9 kJ/mol, which agrees well with the QENS results. The molecular motions of the hexyl side groups in poly(3-hexylthiophene) contribute to this relaxation process in P3HT, which is coupled with a cooperative charge transport along the P3HT chains. In the cutoff frequency range, the real part of complex conductivity (sigma(')) gradually transitions to a frequency-independent conductivity (sigma(')(proportional to)), which is thermally activated. The activation energy of sigma(') at 50 MHz is about 80 meV. In comparison, the activation energy of the dc conductivity, sigma(0), is larger, about 280 meV, while the value of sigma(0), is many orders of magnitude smaller than sigma(')(proportional to) We conclude that the local relaxation of the hexyl side groups contribute to a topological disorder in the polymer structure. As a consequence the energy barriers of the charge transport increase and the conductivity decreases. At 190 K the conductivity decreases from the disorder-free sigma(')(proportional to) of approximately 5x10(-4) S/m to sigma(0) of about 1x10(-9) S/m.
引用
收藏
页数:7
相关论文
共 59 条
[31]   LINEAR RELAXATION - DISTRIBUTIONS, THERMAL-ACTIVATION, STRUCTURE, AND AMBIGUITY [J].
MACDONALD, JR .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :R51-R62
[32]  
MACEDO PB, 1972, PHYS CHEM GLASSES, V13, P171
[33]   Crystallization mechanism of regioregular poly(3-alkyl thiophene)s [J].
Malik, S ;
Nandi, AK .
JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2002, 40 (18) :2073-2085
[34]   The high-flux backscattering spectrometer at the NIST Center for Neutron Research [J].
Meyer, A ;
Dimeo, RM ;
Gehring, PM ;
Neumann, DA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (05) :2759-2777
[35]   STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
MOTT, NF ;
DAVIS, EA ;
STREET, RA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996
[36]   Shear-induced conductor-insulator transition in melt-mixed polypropylene-carbon nanotube dispersions [J].
Obrzut, J. ;
Douglas, J. F. ;
Kharchenko, S. B. ;
Migler, K. B. .
PHYSICAL REVIEW B, 2007, 76 (19)
[37]   Input impedance of a coaxial line terminated with a complex gap capacitance - Numerical and experimental analysis [J].
Obrzut, J ;
Anopchenko, A .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2004, 53 (04) :1197-1201
[38]  
OBRZUT J, 2005, P IEEE C INSTR MEAS, V2, P1530
[39]   Cocrystallization mechanism of poly(3-hexyl thiophenes) with different amount of chain regioregularity [J].
Pal, Susmita ;
Nandi, Arun K. .
JOURNAL OF APPLIED POLYMER SCIENCE, 2006, 101 (06) :3811-3820
[40]   High carrier density and metallic conductivity in poly(3-hexylthiophene) achieved by electrostatic charge injection [J].
Panzer, Matthew J. ;
Frisbie, C. Daniel .
ADVANCED FUNCTIONAL MATERIALS, 2006, 16 (08) :1051-1056