InP/GaAsSb type-II DHBTs with fT>350 GHz

被引：19

作者：

Chu-Kung, BF ^{[1
]}

Feng, M ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 20期

关键词：

D O I：

10.1049/el:20046286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Type-II lnP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak f(T) of 358 GHz. The device consists of a 0.35 x 8 mum emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BVCEO > 4 V and a maximum DC current gain (beta) of 19. The peak RF operating collector current density exceeds 900 kA/cm(2).

引用

页码：1305 / 1307

页数：3

共 10 条

[1]

Bhat R, 1996, APPL PHYS LETT, V68, P985, DOI 10.1063/1.116120

[2] 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO ≥ 6 V [J].

Dvorak, MW ;

Bolognesi, CR ;

Pitts, OJ ;

Watkins, SP .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) :361-363

[3] InP/InGaAs SHBTs with 75 nm collector and fT > 500 GHz [J].

Hafez, W ;

Lai, JW ;

Feng, M .

ELECTRONICS LETTERS, 2003, 39 (20) :1475-1476

[4]

HAFEZ W, 2004, 2004 GAAS MANTECH C, P269

[5]

Hattendorf M. L., 2002, 2002 GaAs MANTECH Conference. Digest of Papers, P255

[6] On the role of interface imperfections in thermoelectric nondestructive materials characterization [J].

Hu, JT ;

Nagy, PB .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :467-469

[7]

Ida M, 2003, TG IEEE GAL ARS, P211

[8] Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base [J].

Ida, M ;

Kurishima, K ;

Watanabe, N .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) :694-696

[9]

McDermott BT, 1996, APPL PHYS LETT, V68, P1386, DOI 10.1063/1.116088

[10]

ODA Y, 2001, ICMOVPE 12 C

← 1 →

InP/GaAsSb type-II DHBTs with fT&gt;350 GHz

InP/GaAsSb type-II DHBTs with fT>350 GHz