DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction

被引：52

作者：

Aoi, Takafumi ^{[1
]}

Oka, Nobuto ^{[1
]}

Sato, Yasushi ^{[1
]}

Hayashi, Ryo ^{[2
]}

Kumomi, Hideya ^{[2
]}

Shigesato, Yuzo ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Kanagawa 2298558, Japan

[2] Canon Inc, Ohta Ku, Tokyo 1468501, Japan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 11期

关键词：

Amorphous indium gallium zinc oxide; Transparent amorphous semiconductor oxide; H2O; dc magnetron sputtering; Thin film transistor; CARRIER TRANSPORT; SEMICONDUCTORS; TRANSISTORS;

D O I：

10.1016/j.tsf.2009.09.176

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous indium-gallium-zinc-oxide (a-IGZO) films were deposited by dc magnetron sputtering with H2O introduction and how the H2O partial pressure (P-H2O) during the deposition affects the electrical properties of the films was investigated in detail Resistivity of the a-IGZO films increased dramatically to over 2 x 10(5) Omega cm with increasing P-H2O to 2.7 x 10(-2) Pa while the hydrogen concentration in the films increased to 2 0 x 10(21) cm(-3) TFTs using a-IGZO channels deposited under P-H2O at 1 6-8.6 x 10(-2) Pa exhibited a field-effect mobility of 1.4-3 0 cm(2)/Vs. subthreshold swing of 1 0-1.6 V/decade and on-off current ratio of 3 9 x 10(7)-1.0 x 10(8). (C) 2009 Elsevier B V All rights reserved

引用

页码：3004 / 3007

页数：4

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