Structural determination of the C60/Ge(111) interface via X-ray diffraction

被引:9
作者
Kidd, T
Aburano, RD
Hong, HW
Gog, T
Chiang, TC
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Cypress Semicond, San Jose, CA 95134 USA
[4] Argonne Natl Lab, Adv Photon Source, CMC CAT, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
carbon; coatings; germanium; single crystal epitaxy; surface relaxation and reconstruction; x-ray scattering; diffraction; and reflection;
D O I
10.1016/S0039-6028(97)00731-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An X-ray diffraction study was performed to determine the nature of the C-60/Ge(111) interface formed by depositing C-60 on a Ge(111)-c(2 x 8) surface at room temperature. In-plane k-scans show a (1 x 1) periodicity at the C-60/Ge(111) interface with no trace of the c(2 x 8) reconstruction, indicating that the Ce adatoms on the clean c(2 x 8)-reconstructed surface are displaced. Scans alone the (10) rod indicate that these adatoms are transferred from the T-4 bonding site to the H-3 site after C-60 deposition. A model consisting of three relaxed bilayers of Ge and randomly distributed adatoms in the H-3 site explains our results. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:185 / 190
页数:6
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