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- [2] PROPOSAL FOR SYMMETRIC DIMERS AT THE SI(100)-2X1 SURFACE [J]. PHYSICAL REVIEW LETTERS, 1989, 62 (21) : 2491 - 2494
- [3] CALCULATION OF SURFACE-INDUCED CORE-LEVEL SHIFTS FOR COVALENT SEMICONDUCTORS C, SI, GE, AND ALPHA-SN .2. (100) 2 X-1 SURFACES [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 157 (02): : 567 - 574
- [4] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1633 - 1647
- [6] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123
- [7] SURFACE-STRUCTURE AND LONG-RANGE ORDER OF THE GE(111)-C(2X8) RECONSTRUCTION [J]. PHYSICAL REVIEW B, 1988, 38 (14): : 9715 - 9720
- [9] STRUCTURE DETERMINATION OF THE GE(111)-C(2X8) SURFACE BY MEDIUM-ENERGY ION-SCATTERING [J]. PHYSICAL REVIEW B, 1988, 38 (02): : 1585 - 1588
- [10] ORIGIN OF SURFACE-STATES ON SI(111)(7X7) [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (01) : 154 - 157