Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor system

被引：44

作者：

Park, DG ^{[1
]}

Cho, HJ ^{[1
]}

Yeo, IS ^{[1
]}

Roh, JS ^{[1
]}

Hwang, JM ^{[1
]}

机构：

[1] Hyundai Elect Ind Co Ltd, Memory Res & Dev Div, Adv Proc Team, Kyoungkido 467701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1315346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a flat band voltage instability of a p(+) polycrystalline-Si (poly-Si)/Al2O3/n-Si metal-oxide-semiconductor (MOS) system due to boron penetration. The flat band voltage shift of the p(+) poly-Si/Al2O3/n-Si MOS capacitor determined by capacitance-voltage measurement was similar to 1.54 V, corresponding to a p-type dopant level of 8.8x10(12) B ions/cm(2) as the activation temperature increased from 800 to 850 degrees C. Noticeable boron diffusion into the n-type Si channel was also observed by secondary ion mass spectroscopy with activation annealing above 850 degrees C. Incorporation of an ultrathin (similar to 5 Angstrom) silicon oxynitride interlayer between Al2O3 and Si was effective in blocking B penetration, reducing the flat band shift to similar to 90 mV. (C) 2000 American Institute of Physics. [S0003-6951(00)05240-2].

引用

页码：2207 / 2209

页数：3

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