Absolute in situ measurement of surface dangling bonds during a-Si:H growth

被引：18

作者：

Aarts, I. M. P.

Pipino, A. C. R.

de Sanden, M. C. M. van

Kessels, W. M. M.

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期

关键词：

D O I：

10.1063/1.2727561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) is regarded as a model system in mechanistic studies of amorphous semiconductor film growth, where the key reactive site is generally considered to be a surface "dangling bond." Employing an ultrahigh-Q (approximate to 10(10)) monolithic optical resonator, the authors probe the creation of dangling-bond defects during growth of a-Si:H from a predominantly SiHx (x=0-3) radical flux by detecting the associated near-IR subgap absorption with evanescent wave cavity ringdown spectroscopy. They find the apparent dangling-bond creation rate [(5 +/- 3)x10(12) cm(-2) s(-1)] and steady-state surface density [(5 +/- 2)x10(11) cm(-2)] to be considerably lower than expected from dangling-bond-based growth mechanisms. (c) 2007 American Institute of Physics.

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页数：3

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