Dynamic instabilities in master oscillator power amplifier semiconductor lasers

被引：49

作者：

Egan, A ^{[1
]}

Ning, CZ

Moloney, JV

Indik, RA

Wright, MW

Bossert, DJ

McInerney, JG

机构：

[1] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA

[2] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

[3] USAF, Phillips Lab, Semicond Laser Branch, Kirtland AFB, NM 87117 USA

[4] Univ Coll, Dept Phys, Cork, Ireland

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 01期

关键词：

D O I：

10.1109/3.655020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate theoretically the master oscillator power amplifier using a semiconductor laser model that is fully time and space (laterally and longitudinally) resolved, We numerically examine the stability of the device and identify the nature of the different instabilities. These can arise from undamped relaxation oscillations, beating between the longitudinal modes of any of the cavities that comprise the device, or lateral filamentation.

引用

页码：166 / 170

页数：5

共 17 条

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