Assignment of reflectance difference spectroscopy peaks to II-VI surface layers

被引：6

作者：

Schmid, MR

Hingerl, K

Stifter, D

Bonanni, A

Sitter, H

机构：

[1] Profactor GMBH, A-4400 Steyr, Austria

[2] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

molecular beam epitaxy; RHEED; reflectance difference spectroscopy; II-VI semiconductor surfaces;

D O I：

10.1016/S0022-0248(98)80048-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using reflectance difference spectroscopy, we investigate in situ the interface and surface anisotropies and bonding conditions of molecular beam epitaxial grown ZnSe and CdTe layers using GaAs (0 0 1) as substrate, simultaneously characterized by reflection high-energy electron diffraction. The thermally cleaned GaAs (0 0 1) surface shows typically a (4 x 6) reconstruction. In this work we tackle the problem of assigning spectral features in reflectance difference spectroscopy to specific surface terminations. One major goal is to determine the difference between topmost cation and anion layers. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：218 / 222

页数：5

共 13 条

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