Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures

被引：11

作者：

Bridge, CJ

Dawson, P

Buckle, PD

Özsan, ME

机构：

[1] Univ Manchester, Inst Sci & Technol, Dept Phys, Manchester M60 1QD, Lancs, England

[2] BP Solar, Sunbury on Thames TW16 7DX, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 10期

关键词：

D O I：

10.1088/0268-1242/15/10/308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As-grown n-CdTe/n-CdS solar cell structures deposited on tin oxide-coated glass have been studied using low temperature photoluminescence spectroscopy. The structures were annealed in air at temperatures up to 600 degreesC. For anneal temperatures of 400-450 degreesC, and above, acceptor related transitions at around 1.45, 1.51 and 1.56 eV are tentatively ascribed to copper, oxygen and V-Cd-related centres, respectively. Illuminated current-voltage measurements have shown that these findings are consistent with considerable improvements in short circuit current density that are believed to be associated with n- to p-type conversion of the CdTe film.

引用

收藏

页码：975 / 979

页数：5

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