CVD of metals using alcohols and metal acetylacetonates, Part I:: Optimization of process parameters and electrical characterization of synthesized films

A new successful strategy is developed for the production of Ni, Cu, and Co films using commercially available metal acetylacetonates as precursors. Pulsed spray evaporation (PSE) CVD is applied utilizing only alcohols as solvents and reducing agents. The efficiency of the process, with respect to controlling parameters such as pulse width, pulsing frequency, carrier gas flow rate, and concentration of the precursors in the feedstock, is optimized. The growth of metal films as a function of substrate temperature, deposition pressure, and duration of deposition, is examined. Results demonstrate that the metal films grow on various substrates, including glass and SiC, without any incubation time and do not need a seed layer. Resulting resistivities are close to those of the bulk materials for Ni and Cu films, while a value of 150 mu Omega cm, which improves upon annealing, is measured for Co films.