Cathodoluminescence microscopy and photoluminescence of defects in ZnTe

被引：17

作者：

Fernandez, P ^{[1
]}

Garcia, JA

Remon, A

Piqueras, J

Munoz, V

Triboulet, R

机构：

[1] Univ Complutense, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Univ Basque Country, Fac Ciencias, Dept Fis Aplicada 2, Lejona, Vizcaya, Spain

[3] Univ Valencia, ICMUV, Dept Fis Aplicada, E-46100 Burjassot, Valencia, Spain

[4] CNRS, Lab Phys Solides Bellevue, F-92195 Meudon, France

[5] Univ Valencia, ICMUV, Inst Ciencia Mat, E-46100 Burjassot, Spain

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 04期

关键词：

D O I：

10.1088/0268-1242/13/4/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnTe single crystals grown by the cold travelling heater method have been investigated by means of photo-and cathodoluminescence. The spectral region covered in this work ranges from 2.48 eV (500 nm) which corresponds to band-edge emission to 0.62 eV (2000 nm). Visible and infrared cathodoluminescence images have been recorded, and the influence of extended defects on the observed luminescence has been studied.

引用

页码：410 / 416

页数：7

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