PHOTOLUMINESCENCE OF VAPOR AND SOLUTION-GROWN ZNTE SINGLE-CRYSTALS

被引：24

作者：

BIAO, Y

AZOULAY, M

GEORGE, MA

BURGER, A

COLLINS, WE

SILBERMAN, E

SU, CH

VOLZ, ME

SZOFRAN, FR

GILLIES, DC

机构：

[1] FISK UNIV,CTR PHOTON MAT & DEVICES,DEPT PHYS,NASHVILLE,TN 37208

[2] NASA,GEORGE C MARSHALL SPACE FLIGHT CTR,SPACE SCI LAB,HUNTSVILLE,AL 35812

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0022-0248(94)90810-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnTe single crystals grown by horizontal physical vapor transport (PVT) and by vertical traveling heater method (THM) from a Te solution were characterized by photoluminescence (PL) at 10.6 K and by atomic force microscopy (AFM). Copper was identified by PL as a major impurity existing in both crystals, forming a substitutional acceptor, Cu(Zn). The THM ZnTe crystals were found to contain more Cu impurity than the PVT ZnTe crystals. The formation of Cu(Zn)-V(Te) complexes and the effects of annealing, oxygen contamination and intentional Cu doping were also studied. Finally, the surface morphology analyzed by AFM was correlated to the PL results.

引用

页码：219 / 224

页数：6

共 10 条

[1] SURFACE-MORPHOLOGY STUDY ON CDZNTE SINGLE-CRYSTALS BY ATOMIC FORCE MICROSCOPY [J].