Fundamental studies on compensation mechanisms in II-VI compounds

被引：40

作者：

Marfaing, Y

机构：

[1] Lab. Phys. des Solides de Bellevue, CNRS, F-92195, Meudon Cedex

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 161卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00641-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A review of the compensation mechanisms in II-VI compounds and alloys is presented in the light of the more recent experimental and theoretical works. Compensation due to native defects is first considered and then the effects due to shallow-deep transition of impurity levels are described. Three exemplary situations of doping limitation are finally distinguished with the corresponding prototype systems: compensation by native defects (ZnSe:N), achievement of chemical solubility limit (ZnTe:N), impurity deactivation and compensation related to a shallow-deep transition (ZnTe:Ga, ZnSe:As).

引用

收藏

页码：205 / 213

页数：9

相关论文

共 57 条

[1] PLASMA NITROGEN DOPING OF ZNTE, CD1-XZNXTE, AND CDTE BY MOLECULAR-BEAM EPITAXY [J].

BARON, T ;

TATARENKO, S ;

SAMINADAYAR, K ;

MAGNEA, N ;

FONTENILLE, J .

APPLIED PHYSICS LETTERS, 1994, 65 (10) :1284-1286

[2] SPIN-FLIP RAMAN-SCATTERING FROM SHALLOW AND DEEP DONOR CENTERS IN NITROGEN-DOPED P-TYPE ZINC SELENIDE [J].

BOYCE, PJ ;

DAVIES, JJ ;

WOLVERSON, D ;

OHKAWA, K ;

MITSUYU, T .

APPLIED PHYSICS LETTERS, 1994, 65 (16) :2063-2065

[3] DEVIATIONS FROM STOICHIOMETRY IN BINARY IONIC CRYSTALS [J].

BREBRICK, RF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (03) :190-195

[4]

BREBRICK RF, 1961, PHYS CHEM SOLIDS, V18, P116

[5] PERSISTENT PHOTOCONDUCTIVITY IN DONOR-DOPED CD-1-XZN-XTE [J].

BURKEY, BC ;

KHOSLA, RP ;

FISCHER, JR ;

LOSEE, DL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1095-1102

[6] COLUMN-V ACCEPTORS IN ZNSE - THEORY AND EXPERIMENT [J].

CHADI, DJ .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3589-3591

[7] SELF-COMPENSATION THROUGH A LARGE LATTICE-RELAXATION IN P-TYPE ZNSE [J].

CHADI, DJ ;

CHANG, KJ .

APPLIED PHYSICS LETTERS, 1989, 55 (06) :575-577

[8] DOPING IN ZNSE, ZNTE, MGSE, AND MGTE WIDE-BAND-GAP SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1994, 72 (04) :534-537

[9] PRESSURE-DEPENDENCE OF THE PHOTOLUMINESCENCE SPECTRA OF NITROGEN-DOPED ZNSE - EVIDENCE OF COMPENSATING DEEP DONORS [J].

CHEN, AL ;

WALUKIEWICZ, W ;

HALLER, EE .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :1006-1008

[10] OBSERVATIONS ON THE LIMITS TO P-TYPE DOPING IN ZNSE [J].

FAN, Y ;

HAN, J ;

HE, L ;

GUNSHOR, RL ;

BRANDT, MS ;

WALKER, J ;

JOHNSON, NM ;

NURMIKKO, AV .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :1001-1003

← 1 2 3 4 5 6 →