CdTe and CdTe:Cl vapour growth in a semi-closed system

被引:11
作者
Kunz, T [1 ]
Laasch, M [1 ]
Meinhardt, J [1 ]
Benz, KW [1 ]
机构
[1] Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany
关键词
CdTe; physical vapour deposition; semi-closed system; photoluminescence; chlorine doping; compensation;
D O I
10.1016/S0022-0248(97)00748-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Undoped and chlorine-doped CdTe single crystals of 2.4 cm diameter were grown from the vapour phase by a modified Markov method. Boundary conditions for the control of partial pressures were realized applying a heat sink at different temperatures. The influence of the sink on dopant incorporation was investigated by photoluminescence. Transitions of free and bound excitons dominate the PL spectra in cases of undoped CdTe. The characteristic luminescence of the A-centre was identified in CdTe : Cl. Alpha measurements yielded a product of carrier mobility and lifetime of 2 x 10(-4) cm(2)/V. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1005 / 1009
页数:5
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