Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold semi-insulating-GaAs Schottky diode

被引：72

作者：

Sun, ZG

Mizuguchi, M

Manago, T

Akinaga, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, Synthet NanoFunct Mat Project, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

关键词：

D O I：

10.1063/1.1834733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gold (Au)/semi-insulating (SI)-GaAs Schottky diode was fabricated by the standard photolithography method using wet etching. Magnetic-field-dependent avalanche breakdown phenomena were observed in the current-voltage curves measured under magnetic field. The avalanche breakdown due to impact ionization was postponed to higher electrical field under applied magnetic field. Accordingly, threshold voltages of avalanche breakdown increased with the applied magnetic field. Above 0.2 T, avalanche breakdown was totally quenched. When Au-SI-GaAs Schottky diode was operated above the threshold voltage, giant mangetoresistive effects up to 100 000% were achieved under magnetic field of 0.8 T. (C) 2004 American Institute of Physics.

引用

页码：5643 / 5645

页数：3

共 18 条

[1] Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect [J].