Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates

被引：19

作者：

Ruzin, A ^{[1
]}

Casse, G

Glaser, M

Lemeilleur, F

Matheson, J

Watts, S

Zanet, A

机构：

[1] Tel Aviv Univ, Fac Engn, Dept Phys Elect, IL-69978 Tel Aviv, Israel

[2] Univ Liverpool, Liverpool L69 3ZE, Merseyside, England

[3] Brunel Univ, Uxbridge UB8 3PH, Middx, England

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2000年 / 3卷 / 04期

关键词：

radiation hardness; oxygen-enriched; carbon-enriched; silicon; PIN detectors; pions; protons; neutrons;

D O I：

10.1016/S1369-8001(00)00041-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation hardness results of silicon detectors fabricated on bulk float-zone (FZ) material enriched either by carbon or by oxygen are reported. The detectors were irradiated by nuclear reactor neutrons, by 24 GeV/c protons and by 192 MeV pions. It has been shown that the leakage current increases with fluence equally in all silicon detectors under study, regardless of the oxygen or carbon concentrations. The variations in the space-charge density were found to be very different in the oxygen and carbon-enriched materials in the case of irradiation by charged particles, yet rather similar in case of neutrons. (C) 2000 Published by Elsevier Science Ltd.

引用

页码：257 / 261

页数：5

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