Use of 1,1-dimethylhydrazine in the atomic layer deposition of transition metal nitride thin films

Atomic layer deposition (ALD) of TiN,TaNx, NbN, and MoNx thin films from the corresponding metal chlorides and 1,l-dimethylhydrazine (DMHy) was studied. Generally, the films deposited at 400 degrees C exhibited better characteristics compared to the films deposited at the same temperature using NH3 as the nitrogen source. In addition, films could be deposited at lower temperatures down to 200 degrees C. Even though the carbon content in the films was quite high, in the range of 10 atom %, the results encourage further studies. Especially the effect of carbon on the barrier properties and the use of other possibly less carbon-contaminating hydrazine derivatives should be studied. (C) 2000 The Electrochemical Society. S0013-4651(00)03-044-5. All rights reserved.