Enhanced modes of oxygen diffusion in silicon

被引：27

作者：

Ramamoorthy, M ^{[1
]}

Pantelides, ST ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 05期

关键词：

D O I：

10.1016/S0038-1098(98)00075-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experiments have established two modes of enhanced oxygen diffusion in silicon, one involving only oxygen atoms and the other catalyzed by hydrogen. We report state-of-the-art first-principles calculations and determine migration pathways for a self-enhanced mode via oxygen dimers and for the H-enhanced mode via oxygen-hydrogen complexes. The concerted atomic motions are physically transparent and the corresponding reduced activation energies agree with experimental data. (C) 1998 Published by Elsevier Science Ltd.

引用

页码：243 / 248

页数：6

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