Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process

被引:12
作者
Gotoh, Y
Matsumoto, K
Bubanja, V
Vazquez, F
Maeda, T
Harris, JS
机构
[1] AIST, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Stanford Univ, Stanford, CA 94305 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 4B期
关键词
atomic force microscopy; single electron transistor; Coulomb oscillation; three-dimensional simulation;
D O I
10.1143/JJAP.39.2334
中图分类号
O59 [应用物理学];
学科分类号
摘要
A planar-type single electron transistor (SET) was fabricated by the atomic force microscopy (AFM) nano-oxidation process. The fabricated SET showed the Coulomb oscillation characteristic with the period of about 2 V at room temperature. From the three-dimensional simulation, it is found out that the smaller the SET island size, the smaller the tunnel junction capacitance, and the tunnel junction capacitance shows a weak dependence on the tunnel junction width. Using the analytical model, the reason for this weak dependence was clarified.
引用
收藏
页码:2334 / 2337
页数:4
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