Calculation of electronic and optical properties of zinc blende GaP1-xNx

被引：7

作者：

Benkabou, F ^{[1
]}

Becker, JP ^{[1
]}

Certier, M ^{[1
]}

Aourag, H ^{[1
]}

机构：

[1] Univ Sidi, Computat Mat Sci Lab, Belabbes 22000, Algeria

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 02期

关键词：

GaPN; EPM; VCA; ionicity character; transverse effective charge; refractive index;

D O I：

10.1006/spmi.1997.0503

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin-orbit coupling are neglected. Various quantities, such as energy levels, charge densities, ionicity character, transverse effective charge, and refractive index are obtained for this alloy. Moreover, the crossover of the direct and indirect band gaps is predicted. (C) 1998 Academic Press Limited.

引用

页码：453 / 465

页数：13

共 43 条

[1] LUMINESCENCE QUENCHING AND THE FORMATION OF THE GAP1-XNX ALLOY IN GAP WITH INCREASING NITROGEN-CONTENT
BAILLARGEON, JN
CHENG, KY
HOFLER, GE
PEARAH, PJ
HSIEH, KC
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (20) : 2540 - 2542
[2] EFFECT OF ALLOYING AND PRESSURE ON BAND STRUCTURE OF GERMANIUM AND SILICON
BASSANI, F
BRUST, D
[J]. PHYSICAL REVIEW, 1963, 131 (04): : 1524 - &
[3] BAND-STRUCTURE AND REFLECTIVITY OF GAN
BLOOM, S
HARBEKE, G
MEIER, E
ORTENBUR.IB
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01): : 161 - 168
[4] COMPLEX FORM OF DONOR ENERGY-LEVELS IN GALLIUM-PHOSPHIDE
CARTER, AC
DEAN, PJ
SKOLNICK, MS
STRADLING, RA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (24): : 5111 - 5129
[5] VALENCE-BAND AND CONDUCTION-BAND DENSITIES OF STATES FOR TETRAHEDRAL SEMICONDUCTORS - THEORY AND EXPERIMENT
CHELIKOWSKY, JR
WAGENER, TJ
WEAVER, JH
JIN, A
[J]. PHYSICAL REVIEW B, 1989, 40 (14): : 9644 - 9651
[6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
[7] CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE
DAVIS, RF
SITAR, Z
WILLIAMS, BE
KONG, HS
KIM, HJ
PALMOUR, JW
EDMOND, JA
RYU, J
GLASS, JT
CARTER, CH
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1988, 1 (01): : 77 - 104
[8] BOND-ORBITAL MODEL .2.
HARRISON, WA
CIRACI, S
[J]. PHYSICAL REVIEW B, 1974, 10 (04): : 1516 - 1527
[9] EMPIRICAL TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF SEMICONDUCTORS
HERVE, PJL
VANDAMME, LKJ
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5476 - 5477
[10] HUANG MZ, 1984, SUPERLAT MICROSTRUCT, V1, P137

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