Calculation of electronic and optical properties of zinc blende GaP1-xNx

被引：7

作者：

Benkabou, F ^{[1
]}

Becker, JP ^{[1
]}

Certier, M ^{[1
]}

Aourag, H ^{[1
]}

机构：

[1] Univ Sidi, Computat Mat Sci Lab, Belabbes 22000, Algeria

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 02期

关键词：

GaPN; EPM; VCA; ionicity character; transverse effective charge; refractive index;

D O I：

10.1006/spmi.1997.0503

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin-orbit coupling are neglected. Various quantities, such as energy levels, charge densities, ionicity character, transverse effective charge, and refractive index are obtained for this alloy. Moreover, the crossover of the direct and indirect band gaps is predicted. (C) 1998 Academic Press Limited.

引用

页码：453 / 465

页数：13

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