Plasma etching: principles, mechanisms, application to micro- and nano-technologies

被引:152
作者
Cardinaud, C [1 ]
Peignon, MC [1 ]
Tessier, PY [1 ]
机构
[1] Inst Mat Jean Rouxel, LPCM, F-44322 Nantes 03, France
关键词
plasma etching; micro-technology; nano-technology;
D O I
10.1016/S0169-4332(00)00328-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nowadays, plasma-etching processes are asked to produce patterns from the nanometer to the micrometer range with the same efficiency. The very severe requirements in terms of etch rate, selectivity, profile control and surface damage plasma-etching processes lead to, have been at the origin of the development of mechanistic studies by means of plasma diagnostics and surface analysis, as well as the development of new etching devices. We review here the basic concepts of plasma etching, and using examples, we describe more in details important features. We recall, in particular, the important role of the surface layer, the ion bombardment and the substrate temperature. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:72 / 83
页数:12
相关论文
共 33 条
[21]  
PANDHUMSOPORN T, 1998, SPIE S SMART STRUCT
[22]   A KINETIC-STUDY OF REACTIVE ION ETCHING OF TUNGSTEN IN SF6/O2 RF PLASMAS [J].
PEIGNON, MC ;
CARDINAUD, C ;
TURBAN, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (02) :505-512
[23]   ETCHING PROCESSES OF TUNGSTEN IN SF6-O2 RADIOFREQUENCY PLASMAS [J].
PEIGNON, MC ;
CARDINAUD, C ;
TURBAN, G .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :3314-3323
[24]  
PEIGNON MC, 1993, THESIS U NANTES ISIT
[25]   PLASMA-ETCHING OF REFRACTORY-METALS (W, MO, TA) AND SILICON IN SF6 AND SF6-O2 - AN ANALYSIS OF THE REACTION-PRODUCTS [J].
PICARD, A ;
TURBAN, G .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1985, 5 (04) :333-351
[26]   SiO2/Si selectivity in high density CHF3/CH4 plasmas:: Role of the fluorocarbon layer [J].
Rolland, L ;
Peignon, MC ;
Cardinaud, C ;
Turban, G .
MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) :375-379
[27]   Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor [J].
Rueger, NR ;
Beulens, JJ ;
Schaepkens, M ;
Doemling, MF ;
Mirza, JM ;
Standaert, TEFM ;
Oehrlein, GS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04) :1881-1889
[28]   Essential points for precise etching processes in pulse-time-modulated ultrahigh-frequency plasma [J].
Samukawa, S ;
Tsukada, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :643-646
[29]   Polymerization of fluorocarbons in reactive ion etching plasmas [J].
Stoffels, WW ;
Stoffels, E ;
Tachibana, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (01) :87-95
[30]   DIAGNOSTICS AND CONTROL OF RADICALS IN AN INDUCTIVELY-COUPLED ETCHING REACTOR [J].
SUGAI, H ;
NAKAMURA, K ;
HIKOSAKA, Y ;
NAKAMURA, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :887-893