Optical bandgap formation in AlInGaN alloys

被引：51

作者：

Tamulaitis, G

Kazlauskas, K

Jursenas, S

Zukauskas, A

Khan, MA

Yang, JW

Zhang, J

Simin, G

Shur, MS

Gaska, R

机构：

[1] Vilnius State Univ, Inst MSAR, LT-2006 Vilnius, Lithuania

[2] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[4] Rensselaer Polytech Inst, CIEEM, Troy, NY 12180 USA

[5] Sensor Elect Technol Inc, Latham, NY 12110 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1314288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence, photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices. (C) 2000 American Institute of Physics. [S0003- 6951(00)01440-6].

引用

页码：2136 / 2138

页数：3

共 12 条

[1]

ADIVARAHAN V, 2000, 6 WID BANDG 3 NITR W

[2] High optical quality AlInGaN by metalorganic chemical vapor deposition [J].

Aumer, ME ;

LeBoeuf, SF ;

McIntosh, FG ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3315-3317

[3] Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy [J].

Chung, HM ;

Chuang, WC ;

Pan, YC ;

Tsai, CC ;

Lee, MC ;

Chen, WH ;

Chen, WK ;

Chiang, CI ;

Lin, CH ;

Chang, H .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :897-899

[4]

Görgens L, 2000, APPL PHYS LETT, V76, P577, DOI 10.1063/1.125822

[5] Piezoelectric doping in AlInGaN/GaN heterostructures [J].

Khan, MA ;

Yang, JW ;

Simin, G ;

Gaska, R ;

Shur, MS ;

Bykhovski, AD .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2806-2808

[6] Lattice and energy band engineering in AlInGaN/GaN heterostructures [J].

Khan, MA ;

Yang, JW ;

Simin, G ;

Gaska, R ;

Shur, MS ;

zur Loye, HC ;

Tamulaitis, G ;

Zukauskas, A ;

Smith, DJ ;

Chandrasekhar, D ;

Bicknell-Tassius, R .

APPLIED PHYSICS LETTERS, 2000, 76 (09) :1161-1163

[7] Time-resolved photoluminescence studies of AlxGa1-xN alloys [J].

Kim, HS ;

Mair, RA ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1252-1254

[8] Strain-related phenomena in GaN thin films [J].

Kisielowski, C ;

Kruger, J ;

Ruvimov, S ;

Suski, T ;

Ager, JW ;

Jones, E ;

LilientalWeber, Z ;

Rubin, M ;

Weber, ER ;

Bremser, MD ;

Davis, RF .

PHYSICAL REVIEW B, 1996, 54 (24) :17745-17753

[9] Luminescence spectra and kinetics of disordered solid solutions [J].

Klochikhin, A ;

Reznitsky, A ;

Permogorov, S ;

Breitkopf, T ;

Grün, M ;

Hetterich, M ;

Klingshirn, C ;

Lyssenko, V ;

Langbein, W ;

Hvam, JM .

PHYSICAL REVIEW B, 1999, 59 (20) :12947-12972

[10] Exciton region reflectance of homoepitaxial GaN layers [J].

Korona, KP ;

Wysmolek, A ;

Pakula, K ;

Stepniewski, R ;

Baranowski, JM ;

Grzegory, I ;

Lucznik, B ;

Wroblewski, M ;

Porowski, S .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :788-790

← 1 2 →