Improvement of crystal quality of rf-plasma-assisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediate layers

被引：33

作者：

Kikuchi, A ^{[1
]}

Yamada, T ^{[1
]}

Nakamura, S ^{[1
]}

Kusakabe, K ^{[1
]}

Sugihara, D ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 4B期

关键词：

GaN; AlN; molecular beam epitaxy (MBE); rf-plasma nitrogen; polarity; intermediate layer; threading dislocation;

D O I：

10.1143/JJAP.39.L330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of high-temperature-gl-own AIN multiple intermediate layers (HT-AN-MILs) on the crystal quality of Ga-polarity GaN layers grown on (0001) Al2O3 substrates by molecular beam epitaxy using rf-plasma nitrogen source were investigated. The high-temperature-grown AIN intermediate layers (HT-AIN-ILs) with different thicknesses were found to play different roles in the improvement of crystal quality. The 8-nm-thick HT-AIN-ILs brought about improvement or electrical properties. On the other hand, the 2-nm-thick HT-AIN-ILs improved the surface morphology. The combination of these 8-nm-HT-AIN-ILs and 2-nm-HT-AIN-ILs improved both the electrical properties and the surface morphology concurrently.

引用

页码：L330 / L333

页数：4

共 20 条

[1] ELASTIC STRAIN RELAXATION IN GAN-ALN-GAN SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES [J].