Time-resolved photoluminescence measurements of InGaAs/InP multiple-quantum-well structures at 1.3-mu m wavelengths by use of germanium single-photon avalanche photodiodes

被引：22

作者：

Buller, GS ^{[1
]}

Fancey, SJ ^{[1
]}

Massa, JS ^{[1
]}

Walker, AC ^{[1
]}

Cova, S ^{[1
]}

Lacaita, A ^{[1
]}

机构：

[1] POLITECN MILAN,DIPARTIMENTO ELETTR & INFORMAZ,I-20133 MILAN,ITALY

来源：

APPLIED OPTICS | 1996年 / 35卷 / 06期

关键词：

time-resolved photoluminescence; InGaAs/InP; multiple quantum wells; germanium avalanche photodiodes;

D O I：

10.1364/AO.35.000916

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/InP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 mu m was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 10(18)-10(15) cm(-3). The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes. (C) 1996 Optical Society of America

引用

页码：916 / 921

页数：6

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