CARRIER LIFETIMES IN MBE AND MOCVD INGAAS QUANTUM-WELLS

被引：26

作者：

EHRLICH, JE

NEILSON, DT

WALKER, AC

KENNEDY, GT

GRANT, RS

SIBBETT, W

HOPKINSON, M

机构：

[1] UNIV ST ANDREWS,DEPT PHYS & ASTRON,ST ANDREWS KY16 9SS,SCOTLAND

[2] UNIV SHEFFIELD,SERC III-V SEMICOND FAC,SHEFFIELD S14 4DU,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 02期

关键词：

D O I：

10.1088/0268-1242/8/2/025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 mum. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6 x 10(17) cm-3.

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收藏

页码：307 / 309

页数：3

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