Magnetic anisotropy and domain duplication in transport properties of tunnel junctions

被引：8

作者：

Hehn, M ^{[1
]}

Lenoble, O ^{[1
]}

Lacour, D ^{[1
]}

Schuhl, A ^{[1
]}

机构：

[1] Univ Nancy 1, UMR CNRS 7556, Phys Mat Lab, F-54506 Vandoeuvre Nancy, France

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.62.11344

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A tunnel magnetoresistance signal is used for probing the relative orientations of the local magnetization in the two magnetic electrodes of a tunnel junction. Minor magnetoresistance loops are studied as a function of the return field in order to change the domain configuration of the hard layer. Domain structure duplication of the hard layer template into the soft layer is observed. This effect is shown to be driven by the magnetic anisotropy of the hard layer. Reducing this anisotropy leads to domain duplication but with effects nondiscernible in the tunnel magnetoresistance (TMR) signal. However, a signature of the 360 degrees domain walls is then observed on the TMR signal.

引用

页码：11344 / 11346

页数：3

共 11 条

[1] Quasistatic remagnetization processes in two-dimensional systems with random on-site anisotropy and dipolar interaction: Numerical simulations [J].

Berkov, DV ;

Gorn, NL .

PHYSICAL REVIEW B, 1998, 57 (22) :14332-14343

[2]

CANET F, 1996, THESIS U H POINCARE

[3] Magnetic tunnelling in Fe-Al2O3-Fe trilayers with radio-frequency sputtered Al2O3 barrier layers [J].

Fery, C ;

Hennet, L ;

Lenoble, O ;

Piecuch, M ;

Snoeck, E ;

Bobo, JF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (30) :6629-6642

[4] Tunneling magnetoresistance and induced domain structure in Al2O3-based junctions [J].

Hehn, M ;

Lenoble, O ;

Lacour, D ;

Féry, C ;

Piécuch, M ;

Tiusan, C ;

Ounadjela, K .

PHYSICAL REVIEW B, 2000, 61 (17) :11643-11648

[5] MAGNETIZATION RIPPLE IN FERROMAGNETIC THIN FILMS [J].

LEAVER, KD .

THIN SOLID FILMS, 1968, 2 (1-2) :149-+

[6] Origin of magnetization decay in spin-dependent tunnel junctions [J].

McCartney, MR ;

Dunin-Borkowski, RE ;

Scheinfein, MR ;

Smith, DJ ;

Gider, S ;

Parkin, SSP .

SCIENCE, 1999, 286 (5443) :1337-1340

[7] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[8] Spin polarized tunneling in reactively sputtered tunnel junctions [J].

Platt, CL ;

Dieny, B ;

Berkowitz, AE .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :5523-5525

[9] Oscillatory decay of magnetization induced by domain-wall stray fields [J].

Thomas, L ;

Lüning, J ;

Scholl, A ;

Nolting, F ;

Anders, S ;

Stöhr, J ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 2000, 84 (15) :3462-3465

[10] Domain-wall induced coupling between ferromagnetic layers [J].

Thomas, L ;

Samant, MG ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 2000, 84 (08) :1816-1819

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